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| NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics. Features: D Low Noise D High DC Current Gain D High Breakdown Voltage D Low Pulse Noise Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Steady State Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Breakdown Voltage Collector-to-Emitter DC Current Gain Symbol ICBO IEBO Test Conditions VCB = 120V, IE = 0 VEB = 5V, IC = 0 Min - - 120 350 Typ - - - - Max 100 100 - 700 Unit nA nA V V(BR)CEO IC = 1mA, IB = 0 hFE VCE = 6V, IC = 2mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Saturation Voltage Collector-to-Emitter Base-to-Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure Symbol VCE(sat) VBE fT Cob NF Test Conditions IC = 10mA, IB = 1mA VCE = 6V, IC = 2mA VCE = 6V, IC = 1mA VCB = 10V, IE = 0, f = 1MHz VCE = 6V, IC = 100A, f = 10Hz, Rg = 10k VCE = 6V, IC = 100A, f = 1Hz, Rg = 10k VCE = 6V, IC = 100A, f = 1Hz, Rg = 100k Min - - - - - - - Typ - 0.65 100 4 - - 3 Max 0.3 - - - 6 2 - Unit V V MHz pF dB .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max ECB .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
Price & Availability of NTE234
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